Session | Time | Speaker | Institution | Preliminary title |
MONDAY 14 MAY 2012, 08.15-09.15 REGISTRATION at Science Centre NEMO, Oosterdok 2, 1011 VX Amsterdam |
OPENING | 09.15-09.30 | Arthur Weeber | ECN | nPV Amsterdam: idea and structure of workshop |
FUNDAMENTALS & MATERIALS 09.30-11.00 Chair: Paul Wyers Jan Schmidt | 09:30-09.45 | Robert Falster | MEMC | Lifetime-degrading boron-oxygen centres in p-type and n-type silicon |
09.45-10.00 | Jordi Veirman | INES | Monitoring the effects of interstitial oxygen for the development of high efficiency n-type silicon solar cells |
10.00-10.15 | Iryna Buchovska | Pillar | N-type ingots by IMCC process |
10.15-10.30 | Maxime Forster | ANU | Compensation Engineering To Improve The Doping Uniformity Along N-Type Ingots Grown With UMG-SI |
10.30-10.45 | Razvan Roescu | ISC Konstanz | Correct Measurements of High Efficient Large Area Back Contacted N-Type Solar Cells – Overcoming The Fill Factor Problem |
10.45-11.00 | Discussion | | |
11.00-11.30 | Coffee | | |
HETEROJUNCTIONS 11.30-15.30 Chair before break: Delfina Munoz Jung-Hoon Choi Chair after break: Christophe Ballif Lars Korte | 11.30-11.45 | Christophe Ballif | EPFL/IMT | Advanced processes and perspectives for high efficiency amorphous/crystalline solar cells |
11.45-12.00 | Lars Korte | HZB | High efficiency a-Si:H/c-Si solar cells – device physics, state of the art and future challenges |
12.00-12.15 | Antoine Salomon | Total S.A. | In-Situ Plasma Cleaning For High-Efficiency Silicon Hetero-Junction Solar Cells |
12.15-12.30 | Jean-Paul Kleider | LGEP | Heterojunction on n-type c-Si: determination of interface from electrical techniques |
12.30-12.45 | Nobutaka Nakamura | Choshu | Progress of Silicon-Hetero-Junction (SHJ) technologies in CIC |
12.45-13.00 | Discussion | | |
13.00 | Lunch | | |
14.00-14.15 | Derk Bätzner | Roth &Rau CH | Performance potential of silicon heterojunction cells made from very thin wafers |
14.15-14.30 | Dong Zhang | TU Delft | Design of a SiO2/ITO double layer antireflective coating for application in flat HIT solar cells |
14.30-14.45 | Jung-Hoon Choi | LG | Development of Heterojunction Back Contact Solar Cell for 25% Cell Efficiency |
14.45-15.00 | Thibaut Desrues | INES | Rear Side Optimization of Interdigitated Back Contact Silicon Heterojunction (IBC Si-HJ) Solar Cells |
15.00-15.15 | Rainer Grischke | Day4Energy | Low Temperature Soldering Process for n-type HTJ Solar Cells |
15.15-15.30 | Discussion | | |
15.30-16.00 | Coffee | | |
PROCESSES 16.00-17.15 Chair: Bernd Bitnar Niels Posthuma | 16.00-16.15 | Ajeet Rohatgi | Suniva | Ion implemented 19~20% fficient n-base front and back junction Si solar cells |
16.15-16.30 | Nicholas Bateman | Varian | Ion Implantation for n-type solar cells |
16.30-16.45 | Armin Richter | ISE Fraunhofer | Firing stability of Al2O3/SiNx stacks for the passivation of boron emitters: A comparison between ALD and PECVD deposited Al2O3 |
16.45-17.00 | Lejo Koduvelikulathu | ISC Konstanz | Influence of metallization and firing processes on solar cell ‘Voc’ – A simulation |
17.00-17.15 | Discussion | | |
17.15 Drinks at the Columbus Foyer at Science Centre NEMO |
18.30 Diner at the Glass Ball-room at Science Centre NEMO |
